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MIXA40WB1200TED Converter - Brake - Inverter Module XPT IGBT Single Phase Rectifier Brake Chopper Three Phase Inverter www..com VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM25 = 150 A IC25 IFSM = 28 A IC25 = 60 A = 320 A VCE(sat) = 1.8 V VCE(sat) = 1.8 V Part name (Markingonproduct) MIXA40WB1200TED 21 D11 D13 D15 22 D7 T1 D1 18 17 6 T3 D3 20 19 5 T5 D5 NTC 8 4 7 1 2 3 16 15 D12 D14 D16 14 T7 11 10 T2 D2 12 T4 D4 13 D6 T6 9 E 72873 23 24 Pin configuration see outlines. Features: *Easyparallelingduetothepositive temperaturecoefficientoftheon-state voltage *RuggedXPTdesign (Xtreme light Punch Through) results in: -shortcircuitratedfor10sec. -verylowgatecharge - square RBSOA @ 3x IC -lowEMI *Thinwafertechnologycombinedwith theXPTdesignresultsinacompetitive lowVCE(sat) *SONICTMdiode -fastandsoftreverserecovery -lowoperatingforwardvoltage Application: *ACmotordrives *Solarinverter *Medicalequipment *Uninterruptiblepowersupply *Air-conditioningsystems *Weldingequipment *Switched-modeand resonant-modepowersupplies Package: *"E2-Pack"standardoutline *Insulatedcopperbaseplate *SolderingpinsforPCBmounting *Temperaturesenseincluded IXYS reserves the right to change limits, test conditions and dimensions. 20090804c (c) 2009 IXYS All rights reserved 1-8 MIXA40WB1200TED Ouput Inverter T1 - T6 Ratings Symbol VCES VGES VGEM IC25 IC80 Ptot VCE(sat) VGE(th) ICES IGES QG(on) td(on) tr td(off) tf Eon Eoff RBSOA SCSOA tSC ISC RthJC Definitions collector emitter voltage max. DC gate voltage max. transient collector gate voltage collector current Conditions TVJ = 25C continuous transient TC = 25C TC = 80C TC = 25C IC = 35 A; VGE = 15 V IC = 1.5 mA; VGE = VCE VCE = VCES; VGE = 0 V VGE = 20 V VCE = 600 V; VGE = 15 V; IC = 35 A inductive load VCE = 600 V; IC = 35 A VGE = 15 V; RG = 27 W VGE = 15 V; RG = 27 W; TVJ = 125C TVJ = 25C TVJ = 125C TVJ = 25C TVJ = 25C TVJ = 125C min. typ. max. 1200 20 30 60 40 195 Unit V V V A A W V V V mA mA nA nC ns ns ns ns mJ mJ total power dissipation collector emitter saturation voltage gate emitter threshold voltage collector emitter leakage current gate emitter leakage current total gate charge turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse reverse bias safe operating area short circuit safe operating area short circuit duration short circuit current thermal resistance junction to case 1.8 2.1 5.5 6.0 0.2 2.1 6.5 2.1 500 106 70 40 250 100 3.8 4.1 105 10 140 0.64 TVJ = 125C VCEK = 1200 V TVJ = 125C A s A K/W VCE = 900 V; VGE = 15 V; RG = 27 W;non-repetitive (perIGBT) Output Inverter D1 - D6 Ratings Symbol VRRM IF25 IF80 VF Qrr IRM trr Erec RthJC Definitions max. repetitve reverse voltage forward current forward voltage reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy thermal resistance junction to case Conditions TVJ = 25C TC = 25C TC = 80C IF = 30 A; VGE = 0 V VR = 600 V diF /dt=-600A/s IF = 30 A; VGE = 0 V (perdiode) TVJ = 25C TVJ = 125C TVJ = 125C min. typ. max. 1200 44 29 Unit V A A V V C A ns mJ 1.95 1.85 3.6 29 340 1.05 2.2 1.2 TC=25Cunlessotherwisestated K/W IXYS reserves the right to change limits, test conditions and dimensions. 20090804c (c) 2009 IXYS All rights reserved 2-8 MIXA40WB1200TED Brake T7 Ratings Symbol VCES VGES VGEM IC25 IC80 Ptot VCE(sat) VGE(th) ICES IGES QG(on) td(on) tr td(off) tf Eon Eoff RBSOA SCSOA tSC ISC RthJC Definitions collector emitter voltage max. DC gate voltage max. transient collector gate voltage collector current total power dissipation collector emitter saturation voltage gate emitter threshold voltage collector emitter leakage current gate emitter leakage current total gate charge turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse reverse bias safe operating area short circuit safe operating area short circuit duration short circuit current thermal resistance junction to case Conditions TVJ = 25C continuous transient TC = 25C TC = 80C TC = 25C IC = 16 A; VGE = 15 V IC = 0.6 mA; VGE = VCE VCE = VCES; VGE = 0 V VGE = 20 V VCE = 600 V; VGE = 15 V; IC = 15 A inductive load VCE = 600 V; IC = 15 A VGE = 15 V; RG = 56 W VGE = 15 V; RG = 56 W; TVJ = 125C TVJ = 25C TVJ = 125C TVJ = 25C TVJ = 25C TVJ = 125C min. typ. max. 1200 20 30 28 20 100 Unit V V V A A W V V V mA mA nA nC ns ns ns ns mJ mJ 1.8 2.1 5.5 6.0 0.1 2.1 6.5 0.1 500 48 70 40 250 100 1.6 1.7 45 10 60 1.26 TVJ = 125C VCEK = 1200 V TVJ = 125C A s A K/W VCE = 900 V; VGE = 15 V; RG = 56 W;non-repetitive (perIGBT) Brake Chopper D7 Symbol VRRM IF25 IF80 VF IR Qrr IRM trr Erec RthJC Definitions max. repetitive reverse voltage forward current forward voltage reverse current reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy thermal resistance junction to case Conditions TVJ = 25C TC = 25C TC = 80C IF = 10 A; VGE = 0 V VR = VRRM VR = 600 V diF /dt=tbdA/s IF = 10 A; VGE = 0 V (perdiode) TVJ = 25C TVJ = 125C TVJ = 25C TVJ = 125C TVJ = 125C min. Ratings typ. max. 1200 12 8 2.5 2.6 0.5 tbd tbd tbd tbd 3.4 2.9 0.5 Unit V A A V V mA mA C A ns J K/W TC=25Cunlessotherwisestated IXYS reserves the right to change limits, test conditions and dimensions. 20090804c (c) 2009 IXYS All rights reserved 3-8 MIXA40WB1200TED Input Rectifier Bridge D11 - D16 Symbol VRRM IFAV IDAVM IFSM I2t Ptot VF IR RthJC Definitions max. repetitive reverse voltage average forward current max. average DC output current max. forward surge current I2t value for fusing total power dissipation forward voltage reverse current thermal resistance junction to case Conditions TVJ = 25C sine 180 rect.; d = 1/3 t = 10 ms; sine 50 Hz t = 10 ms; sine 50 Hz TC = 80C TC = 80C TVJ = 25C TVJ = 125C TVJ = 25C TVJ = 125C TC = 25C IF = 50 A VR = VRRM (perdiode) TVJ = 25C TVJ = 125C TVJ = 25C TVJ = 125C min. Ratings typ. max. 1600 37 105 320 280 510 390 114 1.34 1.34 0.2 1.1 1.7 0.02 Unit V A A A A A2s A2s W V V mA mA K/W Temperature Sensor NTC Symbol R25 B25/50 Module Symbol TVJ TVJM Tstg VISOL CTI Md dS dA Rpin-chip RthCH Weight Equivalent Circuits for Simulation I V0 R0 Definitions resistance Conditions TC = 25C min. 4.75 Ratings typ. max. 5.0 5.25 3375 Ratings typ. max. 125 150 125 2500 - Unit kW K Definitions operating temperature max. virtual junction temperature storage temperature isolation voltage comparative tracking index mounting torque (M5) creep distance on surface strike distance through air resistance pin to chip thermal resistance case to heatsink Conditions min. -40 -40 Unit C C C V~ Nm mm mm IISOL < 1 mA; 50/60 Hz 3 6 6 5 withheatsinkcompound 0.02 180 6 mW K/W g Symbol V0 R0 V0 R0 V0 R0 V0 R0 V0 R0 Definitions rectifier diode IGBT free wheeling diode IGBT free wheeling diode Conditions D8 - D13 T1 - T6 D1 - D6 T7 D7 min. TVJ = 150C TVJ = 150C TVJ = 150C TVJ = 150C TVJ = 150C Ratings typ. max. 0.88 9 1.1 40 1.2 27 1.1 86 1.15 170 Unit V mW V mW V mW V mW V mW TC=25Cunlessotherwisestated IXYS reserves the right to change limits, test conditions and dimensions. 20090804c (c) 2009 IXYS All rights reserved 4-8 MIXA40WB1200TED Circuit Diagram 21 D11 D13 D15 7 1 2 3 22 D7 T1 D1 18 17 6 T3 D3 20 19 5 T5 D5 NTC 8 4 16 15 D12 D14 D16 14 T7 11 10 T2 D2 12 T4 D4 13 D6 T6 9 23 24 Outline Drawing Dimensions in mm (1 mm = 0.0394") Product Marking Part number M = Module I = IGBT X = XPT A = Standard 40 = Current Rating [A] WB =6-Pack+3~RectifierBridge&BrakeUnit 1200 = Reverse Voltage [V] T =NTC ED =E2-Pack Ordering Standard Part Name MIXA40WB1200TED Marking on Product MIXA40WB1200TED Delivering Mode Base Qty Ordering Code Box 6 507497 20090804c IXYS reserves the right to change limits, test conditions and dimensions. (c) 2009 IXYS All rights reserved 5-8 MIXA40WB1200TED Inverter T1 - T6 70 60 50 IC 40 [A] 30 VGE = 15 V 70 60 50 TVJ = 25C TVJ = 125C VGE = 15 V 17 V 19 V 13 V 11 V IC 40 [A] 30 TVJ = 125C 9V 20 10 0 0 1 2 3 20 10 0 0 1 2 3 4 5 VCE [V] VCE [V] Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 20 IC = 35 A VCE = 600 V 70 60 50 IC 40 [A] 30 VGE [V] 15 10 20 10 0 5 TVJ = 125C TVJ = 25C 5 6 7 8 9 VGE [V] 10 11 12 13 0 0 20 40 60 80 100 120 140 QG [nC] Fig. 4 Typ. turn-on gate charge Eon Fig. 3 Typ. tranfer characteristics 10 8 6 4 2 0 RG = 27 VCE = 600 V VGE = 15 V TVJ = 125C 6 IC = 35 A VCE = 600 V VGE = 15 V TVJ = 125C Eon E [mJ] Eoff 5 E [mJ] Eoff 4 0 20 40 60 80 IC [A] Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, test conditions and dimensions. 3 20 40 60 80 RG [ ] Fig. 6 Typ. switching energy vs. gate resistance 20090804c (c) 2009 IXYS All rights reserved 6-8 MIXA40WB1200TED 60 50 40 IC [A] 10 1 ZthJC [K/W] Diode IGBT 30 20 10 0 TVJ = 125C TVJ = 25C 0.1 0 1 VF [V] 2 3 0.01 0.001 0.01 tp [s] 0.1 1 10 Typ. forward characteristic per diode Typ. transient thermal impedance IGBT Ri 1 2 3 4 0.152 0.072 0.308 0.108 FRD ti 0.0025 0.03 0.03 0.08 Ri 0.341 0.217 0.348 0.294 ti 0.0025 0.03 0.03 0.08 IXYS reserves the right to change limits, test conditions and dimensions. 20090804c (c) 2009 IXYS All rights reserved 7-8 MIXA40WB1200TED Brake T7 & D7 20 18 16 14 12 Vge = 15V 25C 125C 20 25C 18 16 14 12 125C Ic [A] If [A] 0.0 0.5 1.0 1.5 Vce [V] 2.0 2.5 3.0 3.5 10 8 6 4 2 0 10 8 6 4 2 0 0.0 0.5 1.0 1.5 2.0 Vf [V] 2.5 3.0 3.5 4.0 Typ.outputcharacteristics Typ.forwardcharacteristics NTC 10 Zth(j-c) - igbt Zth(j-c) - frd 100000 10000 Zth(j-c) [K/W] 1 R [W] 1000 100 0.01 0.1 tp [s] 1 10 0.1 0.001 0 25 50 75 Tc [C] 100 125 150 Typ.transientthermalimpedance Typ.NTCresistanceversustemperature IXYS reserves the right to change limits, test conditions and dimensions. 20090804c (c) 2009 IXYS All rights reserved 8-8 |
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